Star Tech Journal
Issue: 1984-July - Vol 6 Issue 5 - Page 17
LEVEL 11 (Suffix D)
• 100% burn-in to MIL·STD-883A test condi-
tions equivalent to 160 hours at +125°C.
• 100% post burn-in DC parametric test at
2s·c.
LEVEL 111 (Suffix OS)
• Combination of levels I and II above.
The generalized product flow (or production
process) is as follows:
GENERALIZED
PRODUCT FLOW
Generalized product flow for all Motorola
Bipolar Integrated Circuits purchased to the
"BETTER'' program. Individual product groups
(CMOS, Linear, TTL, TTL/LS, DTL, HTL, ECL,
and MEMORIES) may not include all steps
shown as dictated by specific device
characteristics.
WAFER
FABRICATION
Scanning Electron Microscope Wafer Process Control Monitor: To control oxide step profiles,
contact coverage, and metallization Integrity.
CV Plot Wafer Process Control Monitor: To control field inversion potential, base inversion -
surface channel formation, and to detect any spurious contamination problems.
Performed at final water probe (or, optionally, at final electrical test) to screen out potential
pinhole shorts, Interlayer metal shorts, N+ crossunder shorts, diffusion faults, and similar
defects that cannot be detected by visual die high-power inspection.
Die High-Power Sample Gate Inspection: Performed by in-process Q.A to an 8.0% AOL to
detect any damage caused by 1 00% wafer probe or mechnical scribe and break operation, or
any scratches, metallization smears, or glass on bonding pads.
Die Bond Sample Gate Inspection: Performed by in-process Q.A to a 1.0'!b AOL to detect any
misaligned or tilted die and to assure adequate "wetting" for low thermal resistance and high
die shear strength.
Wire Bond Sample Gate Inspection: Performed by In-process Q.A to a 1.0'!b AOL to detect any
improper wire bonds or wire dress, and any wire bonder damage.
Wire Pull Monitor: Performed by in-process Q.A to maintain process control of bond strength
values per MIL·STD-BB3A, Method 2011, Condition D.
PLASTIC
ENCAPSULATION
Motorola Proprietary Epoxy Molding Compound: Meets or exceeds U.L.
flame-retarding level UL94V-1.
HERMETIC
BAKE
Post Encapsulation Bake: Eight hours at 150°C. Final cure for molding
compound; also stresses wire and die bonds and helps eliminate
marginal devices.
SEALING
II
Ill
100% Temperature Cycling: MIL-STD-883A, Method 1010, ten cycles -25°C to +150°C.
Exercising circuits ten times over a 17 5"C range stresses the die and wire bonds and generally
eliminates any marginal bonds and also screens out some types of wafer defects (pinholes,
interlayer metal shorts, marginal step coverage. N+ crossunder shorts) and marginal seals in
hermetic packages. This screening is superior to thermal shock screening because it does not
introduce latent failures in ceramic packages (microcracks in seals) or in plastic packages
(entrapped liquid) that can result from liquid-to-liquid thermal shock. '
Hermeticity Monitor: Hermetic packages only - combir:iation fine/gross leak test per
modification of MIL-STD-BB3A, Method 1014B. (5 x 108 ATM CC/SEC to 1 x 104 ATM CC/SEC).
Sampled to a 0.65% AOL.
100% Electrical: Functional and DC parametrics at 25°C.
100% Burn-In: MIL·STD·BB3A, Method 1015, for 160 hours minimum at TA of 125°C minimum
(or equivalent, per Arrhenius equation with 1.0eV activation energy). Test condition depends on
device type, but generally condition A or C.
100% High-Temperature Functional: Devices are functionally tested at 1 OO*C, 15°C to 30°C
above maximum rated operating temperatures, to assure reliable operation at elevated
temperatures and to screen out marginally performing devices that could otherwise lower field
reliability. Although epoxy molding compounds have essentially eliminated the thermal
intermittent failure mode, this screen provides protection from any "maverick" intermittent
device being shipped to a customer. This screening is more effective than hot rail "continuity"
testing because non-functional devices can often pass a continuity test.
100% Electrical: Functional and DC parametrlcs at 25°C.
Q.A Electrical and Mechanical Final Acceptance Tests: Sampled to the tightened AOL levels of
Table 1.
Hermeticity Monitor: Hermetic packages only. Fine leak per MIL·STD-BB3A, Method 1014B (5 x
108 ATM CC/SEC) and gross leak per MIL-STD-BB3A, Method 1014C2. Sampled to a
combined AOL of 46%.
SHIPPING
• 100% burn-in to MIL·STD-883A test condi-
tions equivalent to 160 hours at +125°C.
• 100% post burn-in DC parametric test at
2s·c.
LEVEL 111 (Suffix OS)
• Combination of levels I and II above.
The generalized product flow (or production
process) is as follows:
GENERALIZED
PRODUCT FLOW
Generalized product flow for all Motorola
Bipolar Integrated Circuits purchased to the
"BETTER'' program. Individual product groups
(CMOS, Linear, TTL, TTL/LS, DTL, HTL, ECL,
and MEMORIES) may not include all steps
shown as dictated by specific device
characteristics.
WAFER
FABRICATION
Scanning Electron Microscope Wafer Process Control Monitor: To control oxide step profiles,
contact coverage, and metallization Integrity.
CV Plot Wafer Process Control Monitor: To control field inversion potential, base inversion -
surface channel formation, and to detect any spurious contamination problems.
Performed at final water probe (or, optionally, at final electrical test) to screen out potential
pinhole shorts, Interlayer metal shorts, N+ crossunder shorts, diffusion faults, and similar
defects that cannot be detected by visual die high-power inspection.
Die High-Power Sample Gate Inspection: Performed by in-process Q.A to an 8.0% AOL to
detect any damage caused by 1 00% wafer probe or mechnical scribe and break operation, or
any scratches, metallization smears, or glass on bonding pads.
Die Bond Sample Gate Inspection: Performed by in-process Q.A to a 1.0'!b AOL to detect any
misaligned or tilted die and to assure adequate "wetting" for low thermal resistance and high
die shear strength.
Wire Bond Sample Gate Inspection: Performed by In-process Q.A to a 1.0'!b AOL to detect any
improper wire bonds or wire dress, and any wire bonder damage.
Wire Pull Monitor: Performed by in-process Q.A to maintain process control of bond strength
values per MIL·STD-BB3A, Method 2011, Condition D.
PLASTIC
ENCAPSULATION
Motorola Proprietary Epoxy Molding Compound: Meets or exceeds U.L.
flame-retarding level UL94V-1.
HERMETIC
BAKE
Post Encapsulation Bake: Eight hours at 150°C. Final cure for molding
compound; also stresses wire and die bonds and helps eliminate
marginal devices.
SEALING
II
Ill
100% Temperature Cycling: MIL-STD-883A, Method 1010, ten cycles -25°C to +150°C.
Exercising circuits ten times over a 17 5"C range stresses the die and wire bonds and generally
eliminates any marginal bonds and also screens out some types of wafer defects (pinholes,
interlayer metal shorts, marginal step coverage. N+ crossunder shorts) and marginal seals in
hermetic packages. This screening is superior to thermal shock screening because it does not
introduce latent failures in ceramic packages (microcracks in seals) or in plastic packages
(entrapped liquid) that can result from liquid-to-liquid thermal shock. '
Hermeticity Monitor: Hermetic packages only - combir:iation fine/gross leak test per
modification of MIL-STD-BB3A, Method 1014B. (5 x 108 ATM CC/SEC to 1 x 104 ATM CC/SEC).
Sampled to a 0.65% AOL.
100% Electrical: Functional and DC parametrics at 25°C.
100% Burn-In: MIL·STD·BB3A, Method 1015, for 160 hours minimum at TA of 125°C minimum
(or equivalent, per Arrhenius equation with 1.0eV activation energy). Test condition depends on
device type, but generally condition A or C.
100% High-Temperature Functional: Devices are functionally tested at 1 OO*C, 15°C to 30°C
above maximum rated operating temperatures, to assure reliable operation at elevated
temperatures and to screen out marginally performing devices that could otherwise lower field
reliability. Although epoxy molding compounds have essentially eliminated the thermal
intermittent failure mode, this screen provides protection from any "maverick" intermittent
device being shipped to a customer. This screening is more effective than hot rail "continuity"
testing because non-functional devices can often pass a continuity test.
100% Electrical: Functional and DC parametrlcs at 25°C.
Q.A Electrical and Mechanical Final Acceptance Tests: Sampled to the tightened AOL levels of
Table 1.
Hermeticity Monitor: Hermetic packages only. Fine leak per MIL·STD-BB3A, Method 1014B (5 x
108 ATM CC/SEC) and gross leak per MIL-STD-BB3A, Method 1014C2. Sampled to a
combined AOL of 46%.
SHIPPING
Future scanning projects are planned by the International Arcade Museum Library (IAML).